Integrated Circuits (ICs)

DS1220AD-100+

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Analog Devices Inc./Maxim Integrated

NVRAM NVSRAM PARALLEL 16KBIT 5V 24-PIN EDIP TUBE

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DocumentsDS1220AD-100+ | Datasheet

Integrated Circuits (ICs)

DS1220AD-100+

Active

Analog Devices Inc./Maxim Integrated

NVRAM NVSRAM PARALLEL 16KBIT 5V 24-PIN EDIP TUBE

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DocumentsDS1220AD-100+ | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DS1220AD-100+

Access Time	100 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	2K x 8
Memory Size	2 KB
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	24-DIP Module (0.600", 15.24mm)
Supplier Device Package	24-EDIP
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page [x]	100 ns
Write Cycle Time - Word, Page [y]	100 ns

DS1220A Series

16k Nonvolatile SRAM

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Memory Organization	Memory Size	Access Time	Mounting Type	Technology	Memory Format	Memory Interface	Write Cycle Time - Word, Page [custom]	Supplier Device Package	Package / Case	Memory Type	Write Cycle Time - Word, Page [y]	Write Cycle Time - Word, Page [x]	Write Cycle Time - Word, Page
Analog Devices Inc./Maxim Integrated DS1220AB-150+	4.75 V	5.25 V	0 °C	70 °C	2K x 8	2 KB	150 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel	150 ns	24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile
Analog Devices Inc./Maxim Integrated DS1220AB-100IND	4.75 V	5.25 V	-40 ¯C	85 C	2K x 8	2 KB	100 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel		24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1220AB-100IND+	4.75 V	5.25 V	-40 ¯C	85 C	2K x 8	2 KB	100 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel		24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1220AB-150IND+	4.75 V	5.25 V	-40 ¯C	85 C	2K x 8	2 KB	150 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel	150 ns	24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile
Analog Devices Inc./Maxim Integrated DS1220AB-200+	4.75 V	5.25 V	0 °C	70 °C	2K x 8	2 KB	200 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel		24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile			200 ns
Analog Devices Inc./Maxim Integrated DS1220AB-100	4.75 V	5.25 V	0 °C	70 °C	2K x 8	2 KB	100 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel		24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1220AB-200IND	4.75 V	5.25 V	-40 ¯C	85 C	2K x 8	2 KB	200 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel		24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile			200 ns
Analog Devices Inc./Maxim Integrated DS1220AD-100+	4.5 V	5.5 V	0 °C	70 °C	2K x 8	2 KB	100 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel		24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1220AD-100	4.5 V	5.5 V	0 °C	70 °C	2K x 8	2 KB	100 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel		24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1220AD-200	4.5 V	5.5 V	0 °C	70 °C	2K x 8	2 KB	200 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	Parallel		24-EDIP	24-DIP Module (0.600" 15.24mm)	Non-Volatile			200 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tube	1	$ 23.78	<4d
		14	$ 21.76
		28	$ 21.23
		56	$ 20.71
		112	$ 20.19
		252	$ 19.60
		504	$ 19.10
Mouser	N/A	1	$ 20.79	1m+
		10	$ 19.03
		28	$ 18.56
		56	$ 18.10
		112	$ 17.61
		252	$ 17.14
		504	$ 16.70

Description

General part information

DS1220A Series

The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Documents

Technical documentation and resources

DS1220AD-100+ | Datasheet

Datasheet