DS1220AB-100IND+
ActiveIC NVSRAM 16KBIT PARALLEL 24EDIP
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DS1220AB-100IND+
ActiveIC NVSRAM 16KBIT PARALLEL 24EDIP
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Technical Specifications
Parameters and characteristics for this part
| Specification | DS1220AB-100IND+ |
|---|---|
| Access Time | 100 ns |
| Memory Format | NVSRAM |
| Memory Interface | Parallel |
| Memory Organization | 2K x 8 |
| Memory Size | 2 KB |
| Memory Type | Non-Volatile |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 24-DIP Module (0.600", 15.24mm) |
| Supplier Device Package | 24-EDIP |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Voltage - Supply [Max] | 5.25 V |
| Voltage - Supply [Min] | 4.75 V |
| Write Cycle Time - Word, Page [x] | 100 ns |
| Write Cycle Time - Word, Page [y] | 100 ns |
DS1220A Series
16k Nonvolatile SRAM
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Memory Organization | Memory Size | Access Time | Mounting Type | Technology | Memory Format | Memory Interface | Write Cycle Time - Word, Page [custom] | Supplier Device Package | Package / Case | Memory Type | Write Cycle Time - Word, Page [y] | Write Cycle Time - Word, Page [x] | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | 4.75 V | 5.25 V | 0 °C | 70 °C | 2K x 8 | 2 KB | 150 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 150 ns | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | |||
Analog Devices Inc./Maxim Integrated | 4.75 V | 5.25 V | -40 ¯C | 85 C | 2K x 8 | 2 KB | 100 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | 100 ns | 100 ns | ||
Analog Devices Inc./Maxim Integrated | 4.75 V | 5.25 V | -40 ¯C | 85 C | 2K x 8 | 2 KB | 100 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | 100 ns | 100 ns | ||
Analog Devices Inc./Maxim Integrated | 4.75 V | 5.25 V | -40 ¯C | 85 C | 2K x 8 | 2 KB | 150 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 150 ns | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | |||
Analog Devices Inc./Maxim Integrated | 4.75 V | 5.25 V | 0 °C | 70 °C | 2K x 8 | 2 KB | 200 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | 200 ns | |||
Analog Devices Inc./Maxim Integrated | 4.75 V | 5.25 V | 0 °C | 70 °C | 2K x 8 | 2 KB | 100 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | 100 ns | 100 ns | ||
Analog Devices Inc./Maxim Integrated | 4.75 V | 5.25 V | -40 ¯C | 85 C | 2K x 8 | 2 KB | 200 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | 200 ns | |||
Analog Devices Inc./Maxim Integrated | 4.5 V | 5.5 V | 0 °C | 70 °C | 2K x 8 | 2 KB | 100 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | 100 ns | 100 ns | ||
Analog Devices Inc./Maxim Integrated | 4.5 V | 5.5 V | 0 °C | 70 °C | 2K x 8 | 2 KB | 100 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | 100 ns | 100 ns | ||
Analog Devices Inc./Maxim Integrated | 4.5 V | 5.5 V | 0 °C | 70 °C | 2K x 8 | 2 KB | 200 ns | Through Hole | NVSRAM (Non-Volatile SRAM) | NVSRAM | Parallel | 24-EDIP | 24-DIP Module (0.600" 15.24mm) | Non-Volatile | 200 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 24.80 | <4d |
| 14 | $ 22.68 | |||
| 28 | $ 22.13 | |||
| 56 | $ 21.59 | |||
| 112 | $ 21.05 | |||
| 252 | $ 20.43 | |||
Description
General part information
DS1220A Series
The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Documents
Technical documentation and resources