Specification	STD6N62K3

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25.7 nC
Input Capacitance (Ciss) (Max) @ Vds	706 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	1.28 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STD6N62K3 Series

Part	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case
STMicroelectronics STD6N62K3	1.28 Ohm	N-Channel	150 °C	25.7 nC	4.5 V	Surface Mount	MOSFET (Metal Oxide)	10 V	30 V	DPAK	5.5 A	706 pF	90 W	620 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	156	$ 2.73
Mouser	N/A	2500	$ 0.82
		5000	$ 0.80
Newark	Each	1	$ 1.00
		10	$ 1.00
		100	$ 0.99
		500	$ 0.99
		1000	$ 0.96
		2500	$ 0.79
		10000	$ 0.76

Description

General part information

STD6N62K3 Series

These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.100% avalanche testedExtremely high dv/dt capabilityGate charge minimizedVery low intrinsic capacitanceImproved diode reverse recovery characteristicsZener-protected