Specification	FDMS86368-F085

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	214 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDMS86368_F085 Series

N-Channel PowerTrench® MOSFET 80V, 80A, 4.5 mΩ

Part	Supplier Device Package	Qualification	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Grade	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMS86368-F085	Power56	AEC-Q101	20 V	80 V	4 V	N-Channel	Automotive	MOSFET (Metal Oxide)	4.5 mOhm	10 V	8-PowerVDFN	75 nC	Surface Mount	214 W	-55 °C	175 ░C	4350 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel PowerTrench®MOSFET 80V, 80A, 4.5 mΩ

Technical documentation and resources