Discrete Semiconductor Products

BUK9K32-100EX

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MOSFET 2N-CH 100V 26A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 26A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9K32-100EX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	27.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3168 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	64 W
Qualification	AEC-Q100
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Rds On (Max) @ Id, Vgs	Package / Case	Technology	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Qualification	Grade	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power - Max [Max]	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP BUK9K32-100EX	26 A	2 N-Channel (Dual)	31 mOhm	8-LFPAK56 SOT-1205	MOSFET (Metal Oxide)	Logic Level Gate	3168 pF	LFPAK56D	AEC-Q100	Automotive	100 V	-55 °C	175 ░C	27.3 nC	Surface Mount	64 W	2.1 V

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General part information

Mosfet Array 100V 26A 64W Surface Mount LFPAK56D

Technical documentation and resources