Discrete Semiconductor Products

MJD112T4

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 25 MHZ, 20 W, 2 A, 1000 ROHS COMPLIANT: YES

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 100 V, 25 MHZ, 20 W, 2 A, 1000 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	MJD112T4

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000
Frequency - Transition	25 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	20 W
Supplier Device Package	DPAK
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Operating Temperature	Frequency - Transition
STMicroelectronics MJD112T4	20 µA	20 W	2 A	100 V	1000	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 V	Surface Mount	150 °C	25 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration.

Technical documentation and resources