Discrete Semiconductor Products

WNS40H100CGQ

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DIODE ARR SCHOTT 100V 20A TO262

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Discrete Semiconductor Products

Active

DIODE ARR SCHOTT 100V 20A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	WNS40H100CGQ

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Speed	500 ns, 200 mA
Supplier Device Package	TO-262
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	710 mV

Part	Technology	Mounting Type	Package / Case	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]
WeEn Semiconductors WNS40100CQ	Schottky	Through Hole	TO-220-3	20 A	TO-220E	50 µA	200 mA 500 ns	150 ¯C	780 mV	1 Pair Common Cathode	100 V
WeEn Semiconductors WNS40H100CQ	Schottky	Through Hole	TO-220-3	20 A	TO-220E	50 µA	200 mA 500 ns			1 Pair Common Cathode	100 V	710 mV	150 °C
WeEn Semiconductors WNS40H100CBJ	Schottky	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 A	D2PAK	50 µA	200 mA 500 ns			1 Pair Common Cathode	100 V	710 mV	150 °C
WeEn Semiconductors WNS40H100C,127	Schottky	Through Hole	TO-220-3	20 A	TO-220E	50 µA	200 mA 500 ns	150 ¯C		1 Pair Common Cathode	100 V	710 mV
WeEn Semiconductors WNS40H100CGQ	Schottky	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	20 A	TO-262	50 µA	200 mA 500 ns				100 V	710 mV	150 °C

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General part information

Diode Array 100 V 20A Through Hole TO-262-3 Long Leads, I2PAK, TO-262AA

Technical documentation and resources

No documents available