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SOT8001
Discrete Semiconductor Products

PMH260UNEH

Active
Nexperia USA Inc.

MOSFET N-CH 20V 1.2A DFN0606-3

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SOT8001
Discrete Semiconductor Products

PMH260UNEH

Active
Nexperia USA Inc.

MOSFET N-CH 20V 1.2A DFN0606-3

Technical Specifications

Parameters and characteristics for this part

SpecificationPMH260UNEH
Current - Continuous Drain (Id) @ 25°C1.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.95 nC
Input Capacitance (Ciss) (Max) @ Vds41 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)360 mW
Power Dissipation (Max)2.23 W
Rds On (Max) @ Id, Vgs310 mOhm
Supplier Device PackageDFN0606-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.33
10$ 0.23
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.06
Digi-Reel® 1$ 0.33
10$ 0.23
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.06
N/A 0$ 0.39
Tape & Reel (TR) 10000$ 0.05
30000$ 0.05
50000$ 0.04
250000$ 0.04

Description

General part information

PMH260 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.