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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Package / Case | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Type | Mounting Type | Power Dissipation (Max) | Power Dissipation (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | 3-XFDFN | MOSFET (Metal Oxide) | 1.2 A | 150 °C | -55 °C | 0.95 nC | 310 mOhm | 950 mV | N-Channel | Surface Mount | 360 mW | 2.23 W | DFN0606-3 | 1.5 V 4.5 V | 8 V | 41 pF |