FDMC7572S
ActiveMOSFET TRANSISTOR, N CHANNEL, 40 A, 25 V, 0.0025 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
FDMC7572S
ActiveMOSFET TRANSISTOR, N CHANNEL, 40 A, 25 V, 0.0025 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC7572S |
|---|---|
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 44 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2705 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 52 W, 2.3 W |
| Rds On (Max) @ Id, Vgs | 3.15 mOhm |
| Supplier Device Package | Power33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 245 | $ 1.23 | |
Description
General part information
FDMC7572S Series
The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Documents
Technical documentation and resources