FDMC7572S Series

N-Channel Power Trench® SyncFET™ 25V, 40A, 3.15mΩ

Catalog

N-Channel Power Trench® SyncFET™ 25V, 40A, 3.15mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	FET Type
ON Semiconductor FDMC7572S	44 nC	3 V	2.3 W 52 W	25 V	-55 °C	150 °C	2705 pF	20 V	4.5 V 10 V	8-PowerTDFN	Surface Mount	3.15 mOhm	Power33	MOSFET (Metal Oxide)	N-Channel

Catalog

N-Channel Power Trench® SyncFET™ 25V, 40A, 3.15mΩ

Key Features

• Max rDS(on)= 3.5 mΩ at VGS= 10 V, ID= 22.5 A

• Max rDS(on)= 4.7 mΩ at VGS= 4.5 V, ID= 18 A

• Advanced Package and Combination for low rDS(on)and high efficiency

• SyncFET Schottky Body Diode

• 100% UIL Tested

• RoHS Compliant

Description

The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.