Specification	FDD6030L

Current - Continuous Drain (Id) @ 25°C	12 A, 50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	56 W, 3.2 W
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDD6030L Series

N-Channel PowerTrench® MOSFET, 30V, 12A, 14.5mΩ

Part	Technology	Supplier Device Package	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDD6030L	MOSFET (Metal Oxide)	TO-252 (DPAK)	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	12 A 50 A	4.5 V 10 V	Surface Mount	20 V	3 V	30 V	3.2 W 56 W	-55 °C	175 ░C	1230 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	339	$ 0.89

Description

General part information

FDD6030L Series

This N-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.