FDD6030L Series

N-Channel PowerTrench® MOSFET, 30V, 12A, 14.5mΩ

Catalog

N-Channel PowerTrench® MOSFET, 30V, 12A, 14.5mΩ

Part	Technology	Supplier Device Package	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDD6030L	MOSFET (Metal Oxide)	TO-252 (DPAK)	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	12 A 50 A	4.5 V 10 V	Surface Mount	20 V	3 V	30 V	3.2 W 56 W	-55 °C	175 ░C	1230 pF

Catalog

N-Channel PowerTrench® MOSFET, 30V, 12A, 14.5mΩ

Key Features

• 12 A, 30V

• RDS(ON)= 14.5 mΩ @ VGS= 10V

• RDS(ON)= 21.0 mΩ @ VGS= 4.5V

• Low gate charge

• Fast Switching Speed

• High performance trench technology for extremelylow RDS(ON)

Description

This N-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.