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STLD257N4F7AG
Discrete Semiconductor Products

STLD257N4F7AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 40 V, 1.27 MOHM TYP., 120 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 DUAL SIDE COOLING PACKAGE

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STLD257N4F7AG
Discrete Semiconductor Products

STLD257N4F7AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 40 V, 1.27 MOHM TYP., 120 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 DUAL SIDE COOLING PACKAGE

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Technical Specifications

Parameters and characteristics for this part

SpecificationSTLD257N4F7AG
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]6.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs66.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds5400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max) [Max]158 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]1.1 mOhm
Supplier Device PackagePowerFlat™ (5x6) Dual Side
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 2500$ 1.76
N/A 0$ 1.43

Description

General part information

STLD257 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.