Specification	FDD306P

Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	1290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	52 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

FDD306P Series

P-Channel 1.8V Specified PowerTrench<sup>®</sup> MOSFET -12V, -6.7A, 28mΩ

Part	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDD306P	Surface Mount	P-Channel	21 nC	1.8 V 4.5 V	52 W	MOSFET (Metal Oxide)	28 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	1290 pF	8 V	12 V	6.7 A	-55 °C	175 ░C	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This P-Channel 1.8V Specified MOSFET uses a advanced low voltage PowerTrench process. It has been optimized for battery power management.

Technical documentation and resources