FDD306P Series

P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -6.7A, 28mΩ

Catalog

P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -6.7A, 28mΩ

Part	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDD306P	Surface Mount	P-Channel	21 nC	1.8 V 4.5 V	52 W	MOSFET (Metal Oxide)	28 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	1290 pF	8 V	12 V	6.7 A	-55 °C	175 ░C	1.5 V

P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -6.7A, 28mΩ

-6.7A, -12V

• RDS(ON)= 28 mΩ @ VGS= -4.5V

• RDS(ON)= 41 mΩ @ VGS= -2.5V

• RDS(ON)= 90 mΩ @ VGS= -1.8V

• Fast switching speed

• High performance trench technology for extremelylow RDS(ON)

• High power and current handling capability

This P-Channel 1.8V Specified MOSFET uses a advanced low voltage PowerTrench process. It has been optimized for battery power management.