Discrete Semiconductor Products

NTMD4840NR2G

Obsolete

DUAL N-CHANNEL POWER MOSFET 30V, 7.5A, 24MΩ

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DUAL N-CHANNEL POWER MOSFET 30V, 7.5A, 24MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTMD4840NR2G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	9.5 nC
Input Capacitance (Ciss) (Max) @ Vds	520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	680 mW
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Dual N-Channel Power MOSFET 30V, 7.5A, 24mΩ

Part	Power - Max [Max]	Configuration	Mounting Type	FET Feature	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTMD4840NR2G	680 mW	2 N-Channel (Dual)	Surface Mount	Logic Level Gate	4.5 A	3 V	8-SOIC	3.9 mm	0.154 in	30 V	9.5 nC	520 pF	8-SOIC	MOSFET (Metal Oxide)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 30 V, 7 A, Dual N-Channel, SOIC-8

Technical documentation and resources