NTMD4840N Series

Dual N-Channel Power MOSFET 30V, 7.5A, 24mΩ

Catalog

Dual N-Channel Power MOSFET 30V, 7.5A, 24mΩ

Part	Power - Max [Max]	Configuration	Mounting Type	FET Feature	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTMD4840NR2G	680 mW	2 N-Channel (Dual)	Surface Mount	Logic Level Gate	4.5 A	3 V	8-SOIC	3.9 mm	0.154 in	30 V	9.5 nC	520 pF	8-SOIC	MOSFET (Metal Oxide)	-55 °C	150 °C

Dual N-Channel Power MOSFET 30V, 7.5A, 24mΩ

• Low RDS(on)to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Dual SOIC-8 Surface Mount Package Saves Board Space

• This is a Pb-Free Device

Power MOSFET 30 V, 7 A, Dual N-Channel, SOIC-8