
Discrete Semiconductor Products
FF900R12IE4PBOSA1
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THE FF900R12IE4P IS A DUAL IGBT4 - E4 MODULE IN A PRIMEPACK™ 2 HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 900 A.
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Discrete Semiconductor Products
FF900R12IE4PBOSA1
ActiveINFINEON
THE FF900R12IE4P IS A DUAL IGBT4 - E4 MODULE IN A PRIMEPACK™ 2 HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 900 A.
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Technical Specifications
Parameters and characteristics for this part
| Specification | FF900R12IE4PBOSA1 |
|---|---|
| Configuration | Half Bridge |
| Current - Collector (Ic) (Max) [Max] | 900 A |
| Current - Collector Cutoff (Max) [Max] | 5 mA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 54 nF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | True |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max [Max] | 20 mW |
| Supplier Device Package | Module |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FF900R12 Series
PrimePACK™2 1200 V, 900 A half-bridge dualIGBT modulewith TRENCHSTOP™ IGBT4, Emitter Controlled 4 Diode, NTC, fast switching chip and pre-appliedThermal Interface Material.
Documents
Technical documentation and resources