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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK6Y19-30PX

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Nexperia USA Inc.

30 V, P-CHANNEL TRENCH MOSFET

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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK6Y19-30PX

Active
Nexperia USA Inc.

30 V, P-CHANNEL TRENCH MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK6Y19-30PX
Current - Continuous Drain (Id) @ 25°C45 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1260 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max)66 W
QualificationAEC-Q101
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.88
10$ 0.72
100$ 0.56
500$ 0.47
Digi-Reel® 1$ 0.88
10$ 0.72
100$ 0.56
500$ 0.47
N/A 8337$ 1.82
Tape & Reel (TR) 1500$ 0.38
3000$ 0.36
7500$ 0.35
10500$ 0.34

Description

General part information

BUK6Y19-30P Series

P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.