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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Grade | Qualification | Vgs(th) (Max) @ Id | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | 45 A | Automotive | AEC-Q101 | 3 V | SC-100 SOT-669 | P-Channel | 4.5 V 10 V | 175 °C | -55 °C | 66 W | LFPAK56 Power-SO8 | 30 V | 35 nC | 1260 pF | MOSFET (Metal Oxide) | 20 V |