Discrete Semiconductor Products

SI6926ADQ-T1-E3

LTB

MOSFET 2N-CH 20V 4.1A 8TSSOP

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 20V 4.1A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6926ADQ-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	10.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	830 mW
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Package / Case [custom]	Package / Case [custom]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	FET Feature	Supplier Device Package	Rds On (Max) @ Id, Vgs	Configuration
Vishay General Semiconductor - Diodes Division SI6926ADQ-T1-E3	4.1 A	830 mW	-55 °C	150 °C	Surface Mount	1 V	8-TSSOP	0.173 "	4.4 mm	10.5 nC	20 V	MOSFET (Metal Oxide)	Logic Level Gate	8-TSSOP	30 mOhm	2 N-Channel (Dual)
Vishay General Semiconductor - Diodes Division SI6926ADQ-T1-GE3	4.1 A	830 mW	-55 °C	150 °C	Surface Mount	1 V	8-TSSOP	0.173 "	4.4 mm	10.5 nC	20 V	MOSFET (Metal Oxide)	Logic Level Gate	8-TSSOP	30 mOhm	2 N-Channel (Dual)

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General part information

Mosfet Array 20V 4.1A 830mW Surface Mount 8-TSSOP

Technical documentation and resources