SI6926 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 20V 4.1A 8TSSOP
| Part | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs(th) (Max) @ Id | Package / Case | Package / Case [custom] | Package / Case [custom] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Technology | FET Feature | Supplier Device Package | Rds On (Max) @ Id, Vgs | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4.1 A | 830 mW | -55 °C | 150 °C | Surface Mount | 1 V | 8-TSSOP | 0.173 " | 4.4 mm | 10.5 nC | 20 V | MOSFET (Metal Oxide) | Logic Level Gate | 8-TSSOP | 30 mOhm | 2 N-Channel (Dual) |
Vishay General Semiconductor - Diodes Division | 4.1 A | 830 mW | -55 °C | 150 °C | Surface Mount | 1 V | 8-TSSOP | 0.173 " | 4.4 mm | 10.5 nC | 20 V | MOSFET (Metal Oxide) | Logic Level Gate | 8-TSSOP | 30 mOhm | 2 N-Channel (Dual) |