Specification	FMBA06

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Supplier Device Package	SuperSOT™-6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	80 V

FMBA06 Series

NPN Multi-Chip General Purpose Amplifier

Part	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]
ON Semiconductor FMBA06	250 mV	100 hFE	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	Surface Mount	-55 °C	150 °C	2 NPN (Dual)	100 MHz	500 mA	100 nA	80 V	700 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.

Technical documentation and resources