UFR3140PF

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DIODE GEN PURP 400V 30A DO21

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Discrete Semiconductor Products

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DIODE GEN PURP 400V 30A DO21

Technical Specifications

Parameters and characteristics for this part

Specification	UFR3140PF

Capacitance @ Vr, F	115 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Press Fit
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	DO-208AA
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-21
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Reverse Recovery Time (trr)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Current - Average Rectified (Io)	Capacitance @ Vr, F
Microchip Technology UFR3140R	50 ns	Stud Mount	1.25 V	Reverse Polarity Standard	15 µA	400 V	DO-203AA	DO-4	175 ░C	-65 C	DO-203AA DO-4 Stud	200 mA 500 ns	30 A	115 pF
Microchip Technology UFR3140PF	50 ns	Press Fit	1.25 V	Standard	15 µA	400 V	DO-21		175 ░C	-55 C	DO-208AA	200 mA 500 ns	30 A	115 pF
Microchip Technology UFR3140	50 ns	Stud Mount	1.25 V	Standard	15 µA	400 V	DO-203AA	DO-4	175 ░C	-65 C	DO-203AA DO-4 Stud	200 mA 500 ns	30 A	115 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 64.88

General part information

Diode 400 V 30A Press Fit DO-21

Technical documentation and resources

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