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Transistor MOSFET P-CH 60V 14A 3-Pin TO-252 Emboss T/R

Discrete Semiconductor Products

R6011END3TL1

NRND

Rohm Semiconductor

TRANSISTOR MOSFET N-CH 600V 11A 3-PIN TO-252 EMBOSS T/R

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Search across all available documentation for this part.

DocumentsMeasurement Method and Usage of Thermal Resistance RthJC Types and Features of Transistors +43

Transistor MOSFET P-CH 60V 14A 3-Pin TO-252 Emboss T/R

Discrete Semiconductor Products

R6011END3TL1

NRND

Rohm Semiconductor

TRANSISTOR MOSFET N-CH 600V 11A 3-PIN TO-252 EMBOSS T/R

Deep-Dive with AI

DocumentsMeasurement Method and Usage of Thermal Resistance RthJC Types and Features of Transistors +43

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6011END3TL1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	670 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	124 W
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	273	$ 3.05
Newark	Each (Supplied on Cut Tape)	1	$ 3.05
		10	$ 2.27
		25	$ 2.05
		50	$ 1.83
		100	$ 1.61
		250	$ 1.49
		500	$ 1.36
		1000	$ 1.30

Description

General part information

R6011END3 Series

Power MOSFET R6011END3 is suitable for switching power supply.

Documents

Technical documentation and resources

Measurement Method and Usage of Thermal Resistance RthJC

Types and Features of Transistors

Application Note

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Method for Monitoring Switching Waveform

Schematic Design & Verification

About Export Regulations

Export Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Moisture Sensitivity Level - Transistors

Package Information

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

TO-252_TL1 Taping Information

Package Information

Notes for Temperature Measurement Using Forward Voltage of PN Junction

About Flammability of Materials

Environmental Data

Reliability Test Result

Manufacturing Data

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

R6011END3 Data Sheet

Report of SVHC under REACH Regulation

Environmental Data

Part Explanation

Application Note

Notes for Temperature Measurement Using Thermocouples

Compliance of the RoHS directive

Environmental Data

How to Create Symbols for PSpice Models

What is a Thermal Model? (Transistor)

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

PCB Layout Thermal Design Guide

Condition of Soldering / Land Pattern Reference

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Notes for Calculating Power Consumption:Static Operation

Basics of Thermal Resistance and Heat Dissipation

What Is Thermal Design

Explanation for Marking

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

How to Use LTspice® Models

Schematic Design & Verification

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

List of Transistor Package Thermal Resistance

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

ESD Data

Characteristics Data

Precautions When Measuring the Rear of the Package with a Thermocouple

How to Use the Thermal Resistance and Thermal Characteristics Parameters

θ<sub>JC</sub> and Ψ<sub>JT</sub>

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Two-Resistor Model for Thermal Simulation

Package Dimensions

Package Information

Anti-Whisker formation - Transistors

Package Information

Technical Data Sheet EN

R6011END3 Series

600V 11A TO-252 (DPAK), Low-noise Power MOSFET

Part	Operating Temperature	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor R6011END3TL1	150 °C	124 W	600 V	11 A	20 V	Surface Mount	670 pF	N-Channel	MOSFET (Metal Oxide)	32 nC	TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V