Catalog
600V 11A TO-252 (DPAK), Low-noise Power MOSFET
Description
AI
Power MOSFET R6011END3 is suitable for switching power supply.
Beta
⌘K
600V 11A TO-252 (DPAK), Low-noise Power MOSFET
600V 11A TO-252 (DPAK), Low-noise Power MOSFET
| Part | Operating Temperature | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 150 °C | 124 W | 600 V | 11 A | 20 V | Surface Mount | 670 pF | N-Channel | MOSFET (Metal Oxide) | 32 nC | TO-252 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 V |