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DirectFET Isometric MF
Discrete Semiconductor Products

IRF40DM229

Obsolete
INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET 40 V ; DIRECTFET™ M PACKAGE; 1.85 MOHM;

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DirectFET Isometric MF
Discrete Semiconductor Products

IRF40DM229

Obsolete
INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET 40 V ; DIRECTFET™ M PACKAGE; 1.85 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF40DM229
Current - Continuous Drain (Id) @ 25°C159 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]161 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]5317 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDirectFET™ Isometric MF
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs [Max]1.85 mOhm
Supplier Device PackageDirectFET™ Isometric MF
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.32
1$ 3.32
N/A 0$ 1.04
0$ 1.04
3981$ 1.76
3981$ 1.76
4396$ 1.76
4396$ 1.76
Tape & Reel (TR) 4800$ 1.04
4800$ 1.04

Description

General part information

IRF40DM229 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

Documents

Technical documentation and resources