Specification	PMPB215ENEAX

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	215 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	15.6 W, 1.6 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

PMPB215ENEA Series

80 V, single N-channel Trench MOSFET

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Technology	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Grade
Nexperia USA Inc. PMPB215ENEAX	80 V	1.6 W 15.6 W	Surface Mount	2.7 V	6-UDFN Exposed Pad	4.5 V 10 V	20 V	215 pF	7.2 nC	AEC-Q101	MOSFET (Metal Oxide)	N-Channel	150 °C	-55 °C	230 mOhm	DFN2020MD-6	1.9 A	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	538	$ 0.78

Description

General part information

PMPB215ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.