80 V, single N-channel Trench MOSFET
80 V, single N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Mounting Type | Vgs(th) (Max) @ Id | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | Technology | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 80 V | 1.6 W 15.6 W | Surface Mount | 2.7 V | 6-UDFN Exposed Pad | 4.5 V 10 V | 20 V | 215 pF | 7.2 nC | AEC-Q101 | MOSFET (Metal Oxide) | N-Channel | 150 °C | -55 °C | 230 mOhm | DFN2020MD-6 | 1.9 A | Automotive |