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Discrete Semiconductor Products

NXH240B120H3Q1P1G

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ON Semiconductor

SI/SIC HYBRID POWER INTEGRATED MODULE (PIM), 3-CHANNEL BOOST

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Discrete Semiconductor Products

NXH240B120H3Q1P1G

Active
ON Semiconductor

SI/SIC HYBRID POWER INTEGRATED MODULE (PIM), 3-CHANNEL BOOST

Technical Specifications

Parameters and characteristics for this part

SpecificationNXH240B120H3Q1P1G
ConfigurationThree Level Inverter
Current - Collector (Ic) (Max) [Max]92 A
Current - Collector Cutoff (Max) [Max]150 µA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce19082 pF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Power - Max [Max]266 W
Supplier Device Package32-PIM (71x37.4)
Vce(on) (Max) @ Vge, Ic2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 99.71
10$ 80.20
25$ 75.23
80$ 74.18
NewarkEach 10$ 83.09
25$ 81.90
50$ 80.72
100$ 75.97
ON SemiconductorN/A 1$ 79.13

Description

General part information

NXH240B120H3Q1P1G Series

The NXH240B120H3Q1P1G is a 3-channel 1200 V IGBT + SiC Boost module. Each channel consists of a fast switching 80 A IGBT, a 30 A SiC diode, a bypass diode and an IGBT protection diode. The module contains an NTC thermistor.