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Discrete Semiconductor Products
NXH240B120H3Q1P1G
ActiveON Semiconductor
SI/SIC HYBRID POWER INTEGRATED MODULE (PIM), 3-CHANNEL BOOST
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Discrete Semiconductor Products
NXH240B120H3Q1P1G
ActiveON Semiconductor
SI/SIC HYBRID POWER INTEGRATED MODULE (PIM), 3-CHANNEL BOOST
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NXH240B120H3Q1P1G |
|---|---|
| Configuration | Three Level Inverter |
| Current - Collector (Ic) (Max) [Max] | 92 A |
| Current - Collector Cutoff (Max) [Max] | 150 µA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 19082 pF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | False |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Power - Max [Max] | 266 W |
| Supplier Device Package | 32-PIM (71x37.4) |
| Vce(on) (Max) @ Vge, Ic | 2.7 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 99.71 | |
| 10 | $ 80.20 | |||
| 25 | $ 75.23 | |||
| 80 | $ 74.18 | |||
| Newark | Each | 10 | $ 83.09 | |
| 25 | $ 81.90 | |||
| 50 | $ 80.72 | |||
| 100 | $ 75.97 | |||
| ON Semiconductor | N/A | 1 | $ 79.13 | |
Description
General part information
NXH240B120H3Q1P1G Series
The NXH240B120H3Q1P1G is a 3-channel 1200 V IGBT + SiC Boost module. Each channel consists of a fast switching 80 A IGBT, a 30 A SiC diode, a bypass diode and an IGBT protection diode. The module contains an NTC thermistor.
Documents
Technical documentation and resources