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8 SOIC
Discrete Semiconductor Products

NVMS5P02R2G

NRND
ON Semiconductor

SINGLE P-CHANNEL ENHANCEMENT−MODE POWER MOSFET -20V, -5.4A, 33MΩ

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8 SOIC
Discrete Semiconductor Products

NVMS5P02R2G

NRND
ON Semiconductor

SINGLE P-CHANNEL ENHANCEMENT−MODE POWER MOSFET -20V, -5.4A, 33MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMS5P02R2G
Current - Continuous Drain (Id) @ 25°C3.95 A
Drain to Source Voltage (Vdss)20 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs33 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.10
10$ 0.90
100$ 0.70
500$ 0.60
1000$ 0.49
Digi-Reel® 1$ 1.10
10$ 0.90
100$ 0.70
500$ 0.60
1000$ 0.49
Tape & Reel (TR) 2500$ 0.41
NewarkEach (Supplied on Full Reel) 3000$ 0.55
6000$ 0.50
12000$ 0.45
18000$ 0.43
30000$ 0.42
ON SemiconductorN/A 1$ 0.59

Description

General part information

NVMS5P02 Series

Automotive, Power MOSFET. -20V, -5.4A, 33 mOhm, Single P-Channel, SO-8, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources