NVMS5P02 Series

Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ

Catalog

Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ

Part	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Grade	Supplier Device Package
ON Semiconductor NVMS5P02R2G	1.25 V	Surface Mount	20 V	-55 °C	150 °C	AEC-Q101	33 mOhm	3.95 A	35 nC	MOSFET (Metal Oxide)	P-Channel	1900 pF	8-SOIC	3.9 mm	0.154 in	Automotive	8-SOIC

Catalog

Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ

Key Features

• High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency

• Miniature SOIC-8 Surface Mount Package--Saves Board Space

• Diode Exhibits High Speed with Soft Recovery

• IDSSSpecified at Elevated Temperature

• Drain-to-Source Avalanche Energy Specified

• Mounting Information for the SO-8 Package is Provided

• AEC−Q101 Qualified and PPAP Capable

Description

Automotive, Power MOSFET. -20V, -5.4A, 33 mOhm, Single P-Channel, SO-8, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.