Discrete Semiconductor Products

JAN2N4033

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Microchip Technology

80 V SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN

Discrete Semiconductor Products

JAN2N4033

Active

Microchip Technology

80 V SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N4033

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	800 mW
Qualification	MIL-PRF-19500/512
Supplier Device Package	TO-39 (TO-205AD)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

JANTX2N4033UB-Transistor Series

PNP Silicon Switching -80V, -1A

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Grade	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Microchip Technology JAN2N4033UB/TR	100 hFE	PNP	Surface Mount	25 nA	1 A	Military	500 mW	UB	80 V	3-SMD No Lead	1 V	MIL-PRF-19500/512
Microchip Technology 2N4033UA	100 hFE	PNP	Surface Mount	10 µA	1 A		500 mW	UA	80 V	4-SMD No Lead	1 V
Microchip Technology JAN2N4033	100 hFE	PNP	Through Hole	10 µA	1 A	Military	800 mW	TO-39 (TO-205AD)	80 V	TO-205AD TO-39-3 Metal Can	1 V	MIL-PRF-19500/512	-55 °C	200 C
Microchip Technology JAN2N4033UB	100 hFE	PNP	Through Hole	10 µA	1 A	Military	500 mW	TO-18	80 V	TO-18-3 Metal Can TO-206AA	1 V	MIL-PRF-19500/512	-55 °C	200 C	TO-206AA
Microchip Technology JANTX2N4033UB	100 hFE	PNP	Through Hole	10 µA	1 A	Military	500 mW	TO-39 (TO-205AD)	80 V	TO-205AD TO-39-3 Metal Can	1 V	MIL-PRF-19500/512	-55 °C	200 C
Microchip Technology JANTX2N4033UB/TR	100 hFE	PNP	Through Hole	10 µA	1 A	Military	500 mW	TO-39 (TO-205AD)	80 V	TO-205AD TO-39-3 Metal Can	1 V	MIL-PRF-19500/512	-55 °C	200 C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 11.30
Newark	Each	100	$ 11.30
		500	$ 10.86

Description

General part information

JANTX2N4033UB-Transistor Series

This specification covers the performance requirements for PNP silicon, 2N4029 and 2N4033 transistors for use in high speed switching and driver applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/512 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. Provisions for radiation hardness assurance (RHA), eight radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet