Discrete Semiconductor Products
STL15N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.335 OHM TYP., 10 A MDMESH M5 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE
Discrete Semiconductor Products
STL15N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.335 OHM TYP., 10 A MDMESH M5 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL15N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 816 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 52 W |
| Rds On (Max) @ Id, Vgs | 375 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL15N65M5 Series
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Documents
Technical documentation and resources