Specification	FCI25N60N-F102

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds	3352 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	216 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FCI25N60N Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 25 A, 125 mΩ, I2PAK

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Technology	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCI25N60N-F102	74 nC	30 V	125 mOhm	4 V	600 V	N-Channel	Through Hole	MOSFET (Metal Oxide)	TO-262 (I2PAK)	216 W	25 A	I2PAK TO-262-3 Long Leads TO-262AA	3352 pF	-55 °C	150 °C	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCI25N60N Series

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.