FCI25N60N Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 25 A, 125 mΩ, I2PAK

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 25 A, 125 mΩ, I2PAK

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Technology	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCI25N60N-F102	74 nC	30 V	125 mOhm	4 V	600 V	N-Channel	Through Hole	MOSFET (Metal Oxide)	TO-262 (I2PAK)	216 W	25 A	I2PAK TO-262-3 Long Leads TO-262AA	3352 pF	-55 °C	150 °C	10 V

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 25 A, 125 mΩ, I2PAK

Key Features

• RDS(on)=107mΩ ( Typ.) @ VGS= 10V, ID= 12.5A

• Ultra low gate charge ( Typ. Qg= 57nC )

• Low effective output capacitance ( Typ. Coss.eff = 262pF )

• 100% avalanche tested

• RoHS compliant

Description

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.