Specification	XPH2R106NC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	6900 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960 mW, 170 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	8-SOP Advance
Supplier Device Package [x]	5
Supplier Device Package [y]	5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

XPH2R106NC Series

12V - 300V MOSFETs, N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Operating Temperature	FET Type	Power Dissipation (Max)	Grade	Vgs(th) (Max) @ Id	Qualification	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage XPH2R106NC,L1XHQ	6900 pF	MOSFET (Metal Oxide)	20 V	8-PowerVDFN	Surface Mount	104 nC	2.1 mOhm	60 V	5	8-SOP Advance	5	175 °C	N-Channel	170 W 960 mW	Automotive	2.5 V	AEC-Q101	110 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

12V - 300V MOSFETs, N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)

Technical documentation and resources