SCTWA60N120G2-4
LTBSILICON CARBIDE POWER MOSFET 1200 V, 35 MOHM TYP., 60 A IN AN HIP247-4 PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.
SCTWA60N120G2-4
LTBSILICON CARBIDE POWER MOSFET 1200 V, 35 MOHM TYP., 60 A IN AN HIP247-4 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCTWA60N120G2-4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1969 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 388 W |
| Rds On (Max) @ Id, Vgs | 52 mOhm |
| Supplier Device Package | TO-247-4 |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCTWA60N120G2-4 Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Documents
Technical documentation and resources