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DPAK_369C
Discrete Semiconductor Products

NVD5862NT4G

Obsolete
ON Semiconductor

POWER MOSFET 60V, 98A, 5.7 MOHM, SINGLE N-CHANNEL, DPAK.

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DPAK_369C
Discrete Semiconductor Products

NVD5862NT4G

Obsolete
ON Semiconductor

POWER MOSFET 60V, 98A, 5.7 MOHM, SINGLE N-CHANNEL, DPAK.

Technical Specifications

Parameters and characteristics for this part

SpecificationNVD5862NT4G
Current - Continuous Drain (Id) @ 25°C18 A, 98 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]82 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds6000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)115 W, 4.1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs5.7 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NVD5863NL Series

Automotive Power MOSFET. 60V, 82A, 7.1 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.