TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

NVD5863NLT4G

Obsolete

ON Semiconductor

POWER MOSFET 60V, 82A, 7.1 MOHM, SINGLE N-CHANNEL, DPAK, LOGIC LEVEL.

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Discrete Semiconductor Products

NVD5863NLT4G

Obsolete

ON Semiconductor

POWER MOSFET 60V, 82A, 7.1 MOHM, SINGLE N-CHANNEL, DPAK, LOGIC LEVEL.

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NVD5863NLT4G

Current - Continuous Drain (Id) @ 25°C	82 A, 14.9 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	3.1 W, 96 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.1 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVD5863NL Series

Power MOSFET 60V, 82A, 7.1 mOhm, Single N-Channel, DPAK, Logic Level.

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Technology	Power Dissipation (Max)	Qualification	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Grade	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NVD5862NT4G	6000 pF	20 V	DPAK	MOSFET (Metal Oxide)	4.1 W 115 W	AEC-Q101	4 V	5.7 mOhm	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	82 nC	10 V	18 A 98 A	Automotive	60 V	-55 °C	175 ░C
ON Semiconductor NVD5865NLT4G	1400 pF	20 V	DPAK	MOSFET (Metal Oxide)	3.1 W 71 W	AEC-Q101	2 V	16 mOhm	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel		4.5 V 10 V	10 A 46 A	Automotive	60 V	-55 °C	175 ░C	29 nC
ON Semiconductor NVD5863NLT4G		20 V	DPAK	MOSFET (Metal Oxide)	3.1 W 96 W	AEC-Q101	3 V	7.1 mOhm	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	70 nC	4.5 V 10 V	14.9 A 82 A	Automotive	60 V	-55 °C	175 ░C		3850 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVD5863NL Series

Automotive Power MOSFET. 60V, 82A, 7.1 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

NVD5863NLT4G

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NVD5863NLT4G

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Technical Specifications

NVD5863NL Series

Pricing

Description

NVD5863NL Series

Documents

Datasheet

Datasheet

Package Drawing-369AA-DPAK 4 LEAD Single Gauge Surface Mount

NVD5863NL Series