
Discrete Semiconductor Products
FDZ3N513ZT
ActiveON Semiconductor
30V INTEGRATED NMOS AND SCHOTTKY DIODE

Discrete Semiconductor Products
FDZ3N513ZT
ActiveON Semiconductor
30V INTEGRATED NMOS AND SCHOTTKY DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | FDZ3N513ZT |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.1 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | WLCSP, 4-XFBGA |
| Power Dissipation (Max) | 1 W |
| Rds On (Max) @ Id, Vgs | 462 mOhm |
| Supplier Device Package | 4-WLCSP (1x1) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 5.5 V |
| Vgs (Max) [Min] | -300 mV |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 860 | $ 0.35 | |
| 860 | $ 0.35 | |||
Description
General part information
FDZ3N513ZT Series
The FDZ3N513ZT is a monolithic NMOS/ Schottky combination (FETky) and is designed and wired to function as a discontinuous conduction mode (DCM) boost LED power train for mobile LED backlighting applications.
Documents
Technical documentation and resources