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TEXTISBQ27532YZFR-G1
Discrete Semiconductor Products

FDZ3N513ZT

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ON Semiconductor

30V INTEGRATED NMOS AND SCHOTTKY DIODE

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TEXTISBQ27532YZFR-G1
Discrete Semiconductor Products

FDZ3N513ZT

Active
ON Semiconductor

30V INTEGRATED NMOS AND SCHOTTKY DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDZ3N513ZT
Current - Continuous Drain (Id) @ 25°C1.1 A
Drain to Source Voltage (Vdss)30 V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1 nC
Input Capacitance (Ciss) (Max) @ Vds85 pF
Mounting TypeSurface Mount
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-55 °C
Package / CaseWLCSP, 4-XFBGA
Power Dissipation (Max)1 W
Rds On (Max) @ Id, Vgs462 mOhm
Supplier Device Package4-WLCSP (1x1)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]5.5 V
Vgs (Max) [Min]-300 mV
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 860$ 0.35
860$ 0.35

Description

General part information

FDZ3N513ZT Series

The FDZ3N513ZT is a monolithic NMOS/ Schottky combination (FETky) and is designed and wired to function as a discontinuous conduction mode (DCM) boost LED power train for mobile LED backlighting applications.