FDZ3N513ZT Series

30V Integrated NMOS and Schottky Diode

Catalog

30V Integrated NMOS and Schottky Diode

Part	FET Feature	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case
ON Semiconductor FDZ3N513ZT	Schottky Diode (Body)	1 W	N-Channel	1 nC	125 ¯C	-55 °C	MOSFET (Metal Oxide)	4-WLCSP (0.96x0.96)	3.2 V 4.5 V	462 mOhm	1.5 V	1.1 A	Surface Mount	-1 V 5.5 V	85 pF	30 V
ON Semiconductor FDZ3N513ZT	Schottky Diode (Isolated)	1 W	N-Channel	1 nC	125 ¯C	-55 °C	MOSFET (Metal Oxide)	4-WLCSP (1x1)		462 mOhm	1.5 V	1.1 A	Surface Mount		85 pF	30 V	-300 mV	5.5 V	4-XFBGA WLCSP

Catalog

30V Integrated NMOS and Schottky Diode

Key Features

• Monolithic NMOS and Schottky Diode

• Ultra-small form factor 1mm x 1mm WLCSP

• Max rDS(on)= 462 mΩ at VGS= 4.5 V, ID= 0.3 A

• Max rDS(on)= 520 mΩ at VGS= 3.2 V, ID= 0.3 A

• HBM ESD protection level > 2000V (Note3)

• RoHS Compliant

Description

The FDZ3N513ZT is a monolithic NMOS/ Schottky combination (FETky) and is designed and wired to function as a discontinuous conduction mode (DCM) boost LED power train for mobile LED backlighting applications.