PSMN038-100HSX

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MOSFET 2N-CH 100V 21.4A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 21.4A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN038-100HSX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	21.4 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	25.9 nC
Input Capacitance (Ciss) (Max) @ Vds	1533 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	53 W
Rds On (Max) @ Id, Vgs	37.6 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Power Dissipation (Max) [Max]	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power - Max [Max]	Configuration
Freescale Semiconductor - NXP PSMN038-100YLX	1905 pF	100 V	37.5 mOhm	39.2 nC	SC-100 SOT-669	2.1 V	MOSFET (Metal Oxide)	10 V	5 V	LFPAK56 Power-SO8	94.9 W	Surface Mount	N-Channel	30 A	-55 °C	175 ░C	20 V
Freescale Semiconductor - NXP PSMN038-100HSX	1533 pF	100 V	37.6 mOhm	25.9 nC	8-LFPAK56 SOT-1205		MOSFET (Metal Oxide)			LFPAK56D		Surface Mount		21.4 A	-55 °C	175 ░C		53 W	2 N-Channel (Dual)

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General part information

Mosfet Array 100V 21.4A (Ta) 53W (Ta) Surface Mount LFPAK56D

Technical documentation and resources

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