Discrete Semiconductor Products

PSMN038-100YLX

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MOSFET N-CH 100V 30A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 30A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN038-100YLX

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1905 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	94.9 W
Rds On (Max) @ Id, Vgs	37.5 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Power Dissipation (Max) [Max]	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power - Max [Max]	Configuration
Freescale Semiconductor - NXP PSMN038-100YLX	1905 pF	100 V	37.5 mOhm	39.2 nC	SC-100 SOT-669	2.1 V	MOSFET (Metal Oxide)	10 V	5 V	LFPAK56 Power-SO8	94.9 W	Surface Mount	N-Channel	30 A	-55 °C	175 ░C	20 V
Freescale Semiconductor - NXP PSMN038-100HSX	1533 pF	100 V	37.6 mOhm	25.9 nC	8-LFPAK56 SOT-1205		MOSFET (Metal Oxide)			LFPAK56D		Surface Mount		21.4 A	-55 °C	175 ░C		53 W	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 30A (Tc) 94.9W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources