Discrete Semiconductor Products

SIDR578EP-T1-RE3

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N-CHANNEL 150 V (D-S) 175C MOSFE

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Discrete Semiconductor Products

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N-CHANNEL 150 V (D-S) 175C MOSFE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR578EP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	17.4 A, 78 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	2540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	150 W, 7.5 W
Rds On (Max) @ Id, Vgs	8.8 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIDR578EP-T1-RE3	17.4 A 78 A	7.5 W 150 W	-55 °C	175 ░C	10 V 49 nC	2540 pF	20 V	Surface Mount	4 V	10 V	7.5 V	PowerPAK® SO-8	8.8 mOhm	N-Channel	PowerPAK® SO-8DC	MOSFET (Metal Oxide)	150 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 17.4A (Ta), 78A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources