SIDR578 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 150 V (D-S) 175C MOSFE
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Package / Case | Rds On (Max) @ Id, Vgs | FET Type | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 17.4 A 78 A | 7.5 W 150 W | -55 °C | 175 ░C | 10 V 49 nC | 2540 pF | 20 V | Surface Mount | 4 V | 10 V | 7.5 V | PowerPAK® SO-8 | 8.8 mOhm | N-Channel | PowerPAK® SO-8DC | MOSFET (Metal Oxide) | 150 V |