Discrete Semiconductor Products

SP8M8FD5TB1

Obsolete

MOSFET N/P-CH 30V 6A/4.5A 8SOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 6A/4.5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SP8M8FD5TB1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A, 6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs	8.5 nC, 7.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	850 pF, 520 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	30 mOhm, 56 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	FET Feature	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Package / Case	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology
Rohm Semiconductor SP8M8FD5TB1	Logic Level Gate 4V Drive	30 mOhm 56 mOhm	2 W	8-SOP	2.5 V	0.154 in	8-SOIC	3.9 mm	Surface Mount	520 pF 850 pF	N and P-Channel	30 V	150 °C	7.2 nC 8.5 nC	4.5 A 6 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 30V 6A (Ta), 4.5A (Ta) 2W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available