Specification	FDD3706

Current - Continuous Drain (Id) @ 25°C	50 A, 14.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1882 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	44 W, 3.8 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

FDD3706 Series

N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ

Part	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)
ON Semiconductor FDD3706	3.8 W 44 W	MOSFET (Metal Oxide)	10 V	2.5 V	-55 °C	175 ░C	1882 pF	23 nC	TO-252 (DPAK)	9 mOhm	14.7 A 50 A	1.5 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	12 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDD3706 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON), fast switching speed and extremely low RDS(ON)in a small package.