FDD3706 Series

N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ

Catalog

N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ

Part	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)
ON Semiconductor FDD3706	3.8 W 44 W	MOSFET (Metal Oxide)	10 V	2.5 V	-55 °C	175 ░C	1882 pF	23 nC	TO-252 (DPAK)	9 mOhm	14.7 A 50 A	1.5 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	12 V	20 V

Catalog

N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ

Key Features

• 50 A, 20 V

• RDS(ON)= 9 mΩ @ VGS= 10 V

• RDS(ON)= 11 mΩ @ VGS= 4.5 V

• RDS(ON)= 16 mΩ @ VGS= 2.5 V

• Low gate charge (16nC typical)

• Fast switching speed

• High performance trench technology for extremelylow RDS(ON)

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON), fast switching speed and extremely low RDS(ON)in a small package.